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Solid State Physics

Tight binding

The tight binding model is a method in solid-state physics for calculating the electronic band structure of a crystal using a basis of atomic orbitals localized at each lattice site. It is one of the most widely used approaches for describing the electronic properties of materials, particularly when the overlap between neighboring atomic orbitals is small, such as in transition metals, semiconductors, and molecular crystals. The model was first developed by Felix Bloch in 1928 and later refined by John C. Slater and George F. Koster in 1954, who introduced a systematic scheme for constructing Hamiltonian matrix elements from symmetry considerations.

1928
Year of Bloch's original formulation
Year
1954
Year of Slater–Koster two-center approximation
Year
~1 eV
Typical bandwidth for transition-metal d-bands
Energy scale
1

Formulation and key equations

The tight binding model begins with a set of atomic orbitals φn(r) centered on each lattice site R. The Bloch wavefunction is constructed as a linear combination of these orbitals, multiplied by a phase factor eik·R, ensuring the wavefunction satisfies Bloch's theorem. The Hamiltonian matrix elements are then evaluated between these Bloch states, yielding a secular equation whose eigenvalues give the energy bands En(k).1

In the simplest case of a single s-orbital per site on a one-dimensional chain, the dispersion relation reduces to E(k) = ε − 2t cos(ka), where ε is the on-site energy and t is the hopping integral between nearest neighbors. This cosine form is a hallmark of tight binding and contrasts with the parabolic dispersion of the nearly free electron model.

2

Slater–Koster method and applications

The Slater–Koster method, introduced in 1954, provides a systematic way to express the hopping integrals between orbitals of different angular momentum (s, p, d) in terms of a small set of two-center integrals (ssσ, spσ, ppσ, ppπ, etc.) that depend only on the distance and orientation between the two atoms.2 This approach allows the construction of realistic band structures for a wide range of materials, including transition metals, where the d-bands are narrow and strongly localized.

Tight binding is extensively used in computational materials science, often combined with empirical parameterization or fitted to first-principles calculations. It is particularly valuable for studying defects, surfaces, and large supercells where plane-wave methods become computationally expensive. The model also forms the basis for the Hückel method in organic chemistry and the extended Hückel method for molecules and solids.

3

Extensions and advanced variants

Several extensions of the tight binding model have been developed to improve its accuracy and range of applicability. The Harrison method provides a set of universal parameters for the two-center integrals, enabling transferable calculations across different materials. The extended Hückel method includes overlap integrals explicitly, while the tight-binding linear muffin-tin orbital (TB-LMTO) method combines tight binding with the LMTO approach for accurate first-principles calculations.

For strongly correlated electron systems, the Hubbard model adds an on-site Coulomb repulsion term U to the tight binding Hamiltonian, leading to phenomena such as Mott insulators and high-temperature superconductivity. The Peierls substitution introduces a phase factor to the hopping integrals in the presence of a magnetic field, enabling the study of orbital magnetism and the quantum Hall effect.

4

Lesser-known aspects

Beyond its standard applications, tight binding has found surprising uses in fields as diverse as photonic crystals, where the model describes the propagation of light in periodic dielectric structures, and in the study of mechanical metamaterials, where it models the vibrational modes of engineered lattices.3 The model also plays a role in the theory of topological insulators, where the Su–Schrieffer–Heeger (SSH) model, a one-dimensional tight binding chain with alternating hopping integrals, serves as the simplest example of a topological phase.

Historically, the tight binding method was instrumental in the early understanding of transition metal magnetism, as it correctly predicted the narrow d-bands that give rise to ferromagnetism in iron, cobalt, and nickel. The method also underpins the concept of Wannier functions, which are the Fourier transforms of Bloch states and are widely used in modern electronic structure calculations for constructing localized basis sets.

Glossary

Bloch's theorem
A theorem stating that in a periodic potential, the wavefunction can be written as a plane wave times a periodic function, leading to the concept of Bloch states.
Hopping integral
The matrix element describing the probability amplitude for an electron to jump from an orbital on one atom to an orbital on a neighboring atom.
Wannier function
A localized function obtained by a unitary transformation of Bloch states, often used as a basis for tight binding models.

Tight binding remains a cornerstone of condensed matter theory, bridging atomic physics and band theory.