Other meanings of Fowler-Nordheim tunneling
Quantum Physics
Fowler-Nordheim tunneling is the quantum mechanical process by which electrons tunnel through a triangular potential barrier at a metal-vacuum (or metal-insulator) interface under a strong applied electric field. It is the dominant mechanism for field electron emission from cold metals and is fundamental to devices such as field-emission displays, electron microscopes, and flash memory.
Fowler-Nordheim tunneling occurs when a strong electric field (typically >10^9 V/m) is applied to a metal surface, reducing the width of the surface potential barrier to a few nanometers. Electrons near the Fermi level can then tunnel through this barrier into the vacuum, producing a current that depends exponentially on the field strength.1
The process is distinct from thermionic emission, where electrons are thermally excited over the barrier, and from photoemission, where photons provide the energy. In Fowler-Nordheim tunneling, the electron's energy is unchanged; it tunnels elastically through the barrier.
The current density J in Fowler-Nordheim tunneling is described by the Fowler-Nordheim equation:
J = (A F² / φ) exp(−B φ^(3/2) / F)
where F is the local electric field, φ is the work function, and A and B are constants (A ≈ 1.54×10⁻⁶ A eV V⁻², B ≈ 6.83×10⁹ V m⁻¹ eV⁻³/²).2 The exponential dependence on φ^(3/2)/F makes the current extremely sensitive to field and work function variations.
In practice, the equation is often written in a form that includes the image charge correction, which rounds the barrier and slightly reduces its effective height and width.
The phenomenon was first observed in the late 19th century as unexplained electron emission from metals under high voltage. In 1928, Ralph Fowler and Lothar Nordheim applied quantum mechanics to explain it, deriving the first quantitative theory.3 Their work was one of the early successes of quantum tunneling theory, following Gamow's explanation of alpha decay.
Later refinements by Murphy and Good (1956) and Forbes (2006) improved the accuracy of the equation, particularly regarding the treatment of the image potential and the use of the 'pre-exponential' factor.
Fowler-Nordheim tunneling is exploited in several technologies:
In vacuum microelectronics, Fowler-Nordheim tunneling is also used in miniature vacuum tubes and sensors.
Beyond the standard picture, several subtle points are often overlooked:
Another niche aspect is the use of Fowler-Nordheim tunneling in vacuum breakdown studies, where it initiates arcs in high-voltage equipment.
Fowler-Nordheim tunneling is typically characterized by measuring the current-voltage (I-V) characteristics of a field emitter. A plot of ln(I/V²) versus 1/V yields a straight line (the Fowler-Nordheim plot), from which the field enhancement factor and emission area can be extracted.
Modern techniques include scanning tunneling microscopy (STM) to probe local emission sites and field emission microscopy (FEM) to image the emission pattern.
Fowler-Nordheim tunneling is a cornerstone of modern electronics and vacuum microelectronics, with applications ranging from flat-panel displays to space propulsion.
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